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Epitaxial rectrystalization of the Ni/MgO(001)interface

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    0185815 - UJF-V 20033141 RIV CZ eng K - Conference Paper (Czech conference)
    Vacík, Jiří - Naramoto, H. - Yamamoto, S. - Narumi, K. - Havránek, Vladimír
    Epitaxial rectrystalization of the Ni/MgO(001)interface.
    Epitaxial rectrystalization of the Ni/MgO(001)interface. Plzeň, 2002, s. 389-391.
    [Konference českých a slovenských fyziků /14./. Plzeň (CZ), 09.09.2002-12.09.2002]
    Institutional research plan: CEZ:AV0Z1048901
    Keywords : Ni * MgO * epitaxy
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    Process of recrystallization of the epitaxially grown Ni layer deposited on the MgO(001) single crystal is studied. Thin Ni layer prepared by the vapor deposition of Ni on the MgO substrate kept were annealed between 500 and 1000 0C and systematically analyzed by Rutherford backscattering, X-ray diffraction and atomic force microscopy. Dramatic change in evolution of the crystalline quality was observed during the thermal treatment. The strain and defect density gradually decreased and at the temperature 1000 0C the strain-free Ni/MgO(001) interface was obtained.
    Permanent Link: http://hdl.handle.net/11104/0082179

     
     

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