0181131 - UFCH-W 20010038 RIV US eng J - Journal Article
Imenkov, A. N. - Kolchanova, N. M. - Yakovlev, Yu. P. - Kubát, Pavel - Civiš, Svatopluk
The Spectral Linewidth of Tunable Semiconductor InAsSb/InAsSbP Lasers Emitting at 3.2-3.6 ćm (2800-3100 cm -1 ).
Review of Scientific Instruments. Roč. 72, č. 4 (2001), s. 1988-1992. ISSN 0034-6748. E-ISSN 1089-7623
R&D Projects: GA AV ČR IAA4040708; GA ČR GA203/01/0634
Institutional research plan: CEZ:AV0Z4040901
Keywords : semiconductor laser * InAsSb/InAsSbP
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 1.352, year: 2001

A new method was used to measure the width of emission lines of a new type of semiconductor laser with composition InAsSb/InAsSbP. The estimated spectral emission linewidths varied in the range 10-30 MHz in dependence of the current passing and the type of laser.
Permanent Link: http://hdl.handle.net/11104/0077727