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Uširenije linii generacii v perestraivajemych tokom lazerach na osnove geterostruktur InAsSbP/InAsSb/InAsSbP
- 1.0180967 - UFCH-W 20000165 RIV RU rus J - Journal Article
Imenkov, A. N. - Kolčanova, N. M. - Kubát, Pavel - Civiš, Svatopluk - Jakovlev, J. P.
Uširenije linii generacii v perestraivajemych tokom lazerach na osnove geterostruktur InAsSbP/InAsSb/InAsSbP.
[The Expansion of Line-width of Tunable Lasers on Basis of InAsSbP/InAsSb/InAsSbP Heterostructures.]
Fizika i technika poluprovodnikov. Roč. 34, č. 12 (2000), s. 72-75. ISSN 0015-3222
R&D Projects: GA AV ČR IAA4040708
Institutional research plan: CEZ:AV0Z4040901; CEZ:A54/98:Z4-040-9-ii
Subject RIV: CF - Physical ; Theoretical Chemistry
Izucena tokovaja zavisimost siriny linni izlucenija perestraivajemych lazernych diodov na osnove dvojnoj geterostruktury InAsSbP/InAsSb/InAsSbP, rabotajuscich v spektralnom diapazone 3.3-3.4 MKM v integrale temperatur 50-80K.
A new method was used to measure the width of emission lines of a new type of semiconductor laser with composition InAsSb/InAsSbP. Parameters used for calculation of spectral emission linewidths were obtained using selected rotation-vibration lines
Permanent Link: http://hdl.handle.net/11104/0077581
Number of the records: 1