0134595 - FZU-D 20030495 RIV JP eng J - Journal Article
Fejfar, Antonín - Mates, Tomáš - Fojtík, Petr - Ledinský, Martin - Luterová, Kateřina - Stuchlíková, The-Ha - Pelant, Ivan - Kočka, Jan - Baumruk, V. - Macková, Anna - Ito, M. - Ro, K. - Uyama, H.
Structure and properties of silicon thin films deposited at low substrate temperatures.
Japanese Journal of Applied Physics. Roč. 42, 8B (2003), s. L987-L989. ISSN 0021-4922. E-ISSN 1347-4065
R&D Projects: GA ČR GA202/03/0789; GA AV ČR IAA1010316; GA AV ČR IAB2949101
Institutional research plan: CEZ:AV0Z1048901; CEZ:AV0Z1010914
Keywords : a-Si:H * ćc-Si:H * low-temperature growth * plastic substrates * crystallinity * hydrogen * electron transport
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.171, year: 2003

Higher content of hydrogen at lower T_s facilitatesformation od order silicon phase even close to room temperature (the sample grown at 35^oC had 30at% of hydrogen and crystallinity ÷60%), providing a technological window for deposition of silicon thin films on cheap polymer substrates with electronic properties suitable for cells.
Permanent Link: http://hdl.handle.net/11104/0032491