0134299 - FZU-D 20030195 RIV US eng J - Journal Article
Toušková, J. - Kindl, Dobroslav - Blahitka, B. - Toušek, J. - Hulicius, Eduard - Pangrác, Jiří - Samokhin, Jevgen - Šimeček, Tomislav - Výborný, Zdeněk
Current-voltage characteristics of GaSb homojunctions prepared by MOVPE.
Solid-State Electronics. Roč. 47, - (2003), s. 1471-1478. ISSN 0038-1101. E-ISSN 1879-2405
R&D Projects: GA AV ČR IAA1010806; GA AV ČR KSK1010104
Institutional research plan: CEZ:AV0Z1010914
Keywords : current-voltage characteristics * MOVPE * charge transport * GaSb * Shockly-Read-Hall recombination model
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.008, year: 2003

mechanism of charge transport through GaSb p-n homojunctions prepared by low pressure metal organic vapour phase epitaxy technology was studied. Analysis of temperature dependences of some parameters of the experimental characteristics gave, besides the expected value of band gap energy, also the activation energy of the recombination level.
Permanent Link: http://hdl.handle.net/11104/0032209