Number of the records: 1
Lattice constant in diluted magnetic semiconductors (Ga, Mn)As
- 1.0134208 - FZU-D 20030101 RIV US eng J - Journal Article
Mašek, Jan - Kudrnovský, Josef - Máca, František
Lattice constant in diluted magnetic semiconductors (Ga, Mn)As.
Physical Review. B. Roč. 67, č. 15 (2003), s. 153203-1 - 153203-4. ISSN 0163-1829
R&D Projects: GA AV ČR IAA1010214; GA ČR GA202/00/0122
Institutional research plan: CEZ:AV0Z1010914
Keywords : diluted magnetic semiconductors * total energy * impurities
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.962, year: 2003
LDA calculations are used to find compositional dependence of the lattice constant of (Ga, Mn)As with defect. Only the presence of the defects can explain the observed expansion of the lattice.
Permanent Link: http://hdl.handle.net/11104/0032123
Number of the records: 1