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Electronic states in Ga.sub.1-x./sub.Mn.sub.x./sub.As: Substitutional versus interstitial position of Mn
- 1.0134170 - FZU-D 20030062 RIV US eng J - Journal Article
Máca, František - Mašek, Jan
Electronic states in Ga1-xMnxAs: Substitutional versus interstitial position of Mn.
Physical Review. B. Roč. 65, č. 23 (2002), s. 235209-1 - 235209-6. ISSN 0163-1829
R&D Projects: GA MŠMT OC P3.80; GA AV ČR IAA1010214
Institutional research plan: CEZ:AV0Z1010914
Keywords : electronic structure * diluted magnetic semiconductors * Mn
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.327, year: 2002
The electronic structure of (Ga, Mn)As crystals with Mn is substitutional, interstitial, and both positions was calculated. It is shown that the interstitial Mn acts as a double donor and compensates the holes created by two Mn atoms in substitutional positions.
Permanent Link: http://hdl.handle.net/11104/0032094
Number of the records: 1