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Influence of pulse duration and annealing on crystallinity and luminescence of laser deposited Er-doped YAG(YAP) layers

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    0134072 - FZU-D 20020361 RIV US eng C - Conference Paper (international conference)
    Jelínek, Miroslav - Oswald, Jiří - Studnička, Václav - Lančok, Ján - Pavelka, Martin - Klini, A. - Fotakis, C.
    Influence of pulse duration and annealing on crystallinity and luminescence of laser deposited Er-doped YAG(YAP) layers.
    0-8194-4704-8. In: Lasers in Material Processing and Manufacturing. Bellingham: SPIE International Society for Optical Engineering, 2002 - (Deng, S.; Okada, T.; Behler, K.; Wang, X.), s. 310-316. Proceedings of SPIE., 4915. ISSN 0277-786X.
    [Lasers in Material Processing and Manufacturing. Shanghai (CN), 16.10.2002-18.10.2002]
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : thin films * subpicosecond deposition * Er:YAG(YAP)
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    Er-doped YAG and YAP layers were grown by nanosecond (20 ns) and subpicosecond (450 fs) KrF laser ablation under a wide set of deposition conditions. Luminescence corresponding to Er +3 ions was observed for all samples.
    Permanent Link: http://hdl.handle.net/11104/0032009

     
     

Number of the records: 1  

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