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Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature
- 1.0134050 - FZU-D 20020338 RIV NL eng J - Journal Article
Švrček, Vladimír - Fejfar, Antonín - Fojtík, Petr - Mates, Tomáš - Poruba, Aleš - Stuchlíková, Hana - Pelant, Ivan - Kočka, Jan - Nasuno, Y. - Kondo, M. - Matsuda, A.
Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature.
Journal of Non-Crystalline Solids. 299-302, - (2002), s. 395-399. ISSN 0022-3093. E-ISSN 1873-4812
Institutional research plan: CEZ:AV0Z1010914
Keywords : ćcSi:H thin films * optoelectronic properties
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.435, year: 2002
The influence of the substrate temperature on structure and optoelectronic properties in the range from 150 to 350oC was explored.
Permanent Link: http://hdl.handle.net/11104/0031991
Number of the records: 1