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Photoluminescence of biased GaAs/Al.sub.x./sub.Ga.sub.1-x./sub.As double quantum wells - many-body effects

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    0133961 - FZU-D 20020247 RIV NL eng J - Journal Article
    Zvára, M. - Grill, R. - Hlídek, P. - Orlita, M. - Soubusta, Jan
    Photoluminescence of biased GaAs/AlxGa1-xAs double quantum wells - many-body effects.
    [Fotoluminescence šikmých dvojitých kvantových stěn v GaAs/AlxGa1-xAs.]
    Physica E: Low-Dimensional Systems and Nanostructures. Roč. 12, - (2002), s. 335-339. ISSN 1386-9477. E-ISSN 1873-1759
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : biased double quantum well * photoluminescence * many-body effects
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.107, year: 2002

    Photolumiescence spectra of an MBE-grown symmetric 10nm wide double quantum wells located in the intrinsic region of p-i-n diode were investigated in electric and magnetic fields.The new PL bands were interpreted as a recombination of DX excitons, coupled by Coulomb interaction to 2D degenerate electron or hole gases in the adjacent well.

    Byla zkoumána fotoluminiscenční spektra v elektrických a magnetických polích na symetrických dvojitých kvantových stěnách o tlouštce 10nm a vypěstovaných metodou MBE
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