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Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions
- 1.0133856 - FZU-D 20020035 RIV DE eng J - Journal Article
Kudrna, J. - Pelant, Ivan - Štěpánek, J. - Trojánek, F. - Malý, P.
Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions.
Applied Physics A - Materials Science & Processing. Roč. 74, - (2002), s. 253-256. ISSN 0947-8396. E-ISSN 1432-0630
R&D Projects: GA AV ČR IAA1010809
Grant - others:GA UK(XC) 180/99
Institutional research plan: CEZ:AV0Z1010914
Keywords : ultra-fast carrier dynamics * hydrogenated microcrystalline silicon * picosecond pump and probe measurements * rate-equation model
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.231, year: 2002
We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements.
Permanent Link: http://hdl.handle.net/11104/0000637
Number of the records: 1