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Transition metal 3d states in HgSe-based diluted magnetic semiconductors

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    0133615 - FZU-D 20010415 RIV CH eng J - Journal Article
    Guziewicz, E. - Kowalski, B. J. - Mašek, Jan - Orlowski, B. A. - Johnson, R. L.
    Transition metal 3d states in HgSe-based diluted magnetic semiconductors.
    Journal of Alloys and Compounds. Roč. 328, - (2001), s. 119-125. ISSN 0925-8388. E-ISSN 1873-4669
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : diluted magnetic semiconductors * resonant photoemission * electronic band structure
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 0.953, year: 2001

    The contribution of transition metal 3d states to the valence band of HgSe doped with Mn, Fe, and Co was investigated by resonant photoemission and CPA calculations.
    Permanent Link: http://hdl.handle.net/11104/0031578

     
     

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