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A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers

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    0133405 - FZU-D 20010203 RIV GB eng J - Journal Article
    Švrček, Vladimír - Pelant, Ivan - Kočka, Jan - Fejfar, Antonín - Toušek, J. - Kondo, M. - Matsuda, A.
    A new approach to surface photovoltage measurements on hydrogenated microcrystalline silicon layers.
    Philosophical Magazine Letters. Roč. 81, č. 6 (2001), s. 405-410. ISSN 0950-0839. E-ISSN 1362-3036
    R&D Projects: GA ČR GA202/98/0669; GA AV ČR IAA1010809
    Institutional research plan: CEZ:A02/98:Z1-010-914
    Keywords : surface photvoltage * microcrystalline silicon * diffusion length
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.346, year: 2001

    A new approach to the surface photovoltage method is demonstrated on thick undoped microcrystalline silicon films grown on different substrates.
    Permanent Link: http://hdl.handle.net/11104/0031374

     
     

Number of the records: 1  

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