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InAs/GaAs multiple quantum dot structures grown by LP-MOVPE

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    0133087 - FZU-D 20000450 RIV NL eng J - Journal Article
    Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard - Melichar, Karel - Vorlíček, Vladimír - Drbohlav, Ivo - Šimeček, Tomislav
    InAs/GaAs multiple quantum dot structures grown by LP-MOVPE.
    Thin Solid Films. Roč. 380, - (2000), s. 101-104. ISSN 0040-6090. E-ISSN 1879-2731
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.160, year: 2000

    Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the pow pressuer metal-organic vapour phase epitaxy technique. Photoluminescence and atomic force microscopy were used as the main characterisation methods for the growth optimisation.
    Permanent Link: http://hdl.handle.net/11104/0031075

     
     

Number of the records: 1  

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