0133004 - FZU-D 20000363 RIV US eng J - Journal Article
Novák, Vít - Cukr, Miroslav - Schowalter, D. - Prettl, W.
Electron mobility in .I.n./I.-GaAs at low-temperature impurity breakdown.
Physical Review. B. Roč. 62, č. 24 (2000), s. 16768-16772. ISSN 0163-1829
R&D Projects: GA AV ČR IAA1010011
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.065, year: 2000

Using a combination of the standard Hall technique and the photoluminescence imaging of galvanomagnetic transport, free-electron density and mobility have been measured in the regime of filamentary current flow after the electric breakdown of n-GaAs at the temperature of liquid helium.
Permanent Link: http://hdl.handle.net/11104/0030995