Number of the records: 1  

Role of ion bombardment in forming CN.sub.x./sub. and CN.sub.x./sub.H.sub.y./sub. films deposited by r.f. - magnetron reactive sputtering and ECR plasma-activated CVD methods

  1. 1.
    0132929 - FZU-D 20000187 RIV CH eng J - Journal Article
    Shaginyan, L. R. - Onoprienko, A. A. - Vereschaka, V. M. - Fendrych, František - Vysotsky, V. G.
    Role of ion bombardment in forming CNx and CNxHy films deposited by r.f. - magnetron reactive sputtering and ECR plasma-activated CVD methods.
    Surface and Coatings Technology. Roč. 113, - (1999), s. 134-139. ISSN 0257-8972
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.008, year: 1999

    Film composition (N/C ratio) and growth rate (Vg) were investigated, depending on the type (d.c. or r.f.) and level of substrate bias in the range 2 to -200V.
    Permanent Link: http://hdl.handle.net/11104/0030921

     
     

Number of the records: 1  

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