0132857 - FZU-D 20000112 RIV CH eng C - Conference Paper (international conference)
Juška, G. - Arlauskas, K. - Genevičius, K. - Kočka, Jan
Charge carrier transport in ćc-Si:H.
0-87849-824-9. In: Ultrafast Phenomena in Semiconductors. Zurich: Trans Tech. Publication Ltd., 1999 - (Asmotas, S.; Dargys, A.), s. 323-328. Material Science Forum., 297/298. ISSN 0255-5476.
[International symposium on Ultrafast Phenomena in Semiconductors /10./. Vilnius (LT), 31.08.1998-02.09.1998]
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism

The influence of electric field redistribution to charge carriercollection and drift time in mu c-Si:H was investigated by time-of-flight abd capacitance measurements.
Permanent Link: http://hdl.handle.net/11104/0030853