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Intrinsic microcrystalline silicon (.mu.c-Si:H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaic and optoelectronics

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    0132784 - FZU-D 20000036 RIV NL eng J - Journal Article
    Shah, A. - Vallat-Sauvain, E. - Torres, P. - Meier, J. - Kroll, U. - Hof, C. - Droz, C. - Goerlitzer, M. - Wyrsch, N. - Vaněček, Milan
    Intrinsic microcrystalline silicon (.mu.c-Si:H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaic and optoelectronics.
    Materials Science and Engineering B-Advanced Functional Solid-State Materials. 69-70, - (2000), s. 219-226. ISSN 0921-5107. E-ISSN 1873-4944
    R&D Projects: GA MŠMT OK 268
    EU Projects: European Commission(XE) JOR3970145 - NEST
    Institutional research plan: CEZ:AV0Z1010914
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    The development of microc-Si:H technology and the introduction of intrinsic [i] microc-Si:H as photovoltaically active naterial is retraced. The present paper will give an overview of the known properties related to this "new" thin -film semiconductor material.
    Permanent Link: http://hdl.handle.net/11104/0030785

     
     

Number of the records: 1  

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