0132736 - FZU-D 20000292 RIV US eng J - Journal Article
Luterová, Kateřina - Pelant, Ivan - Valenta, J. - Rehspringer, J. L. - Muller, D. - Grob, J. J. - Dian, J. - Hönerlage, B.
Red electroluminiscence in Si⁺-implanted sol-gel-derived SiO₂ films.
Applied Physics Letters. Roč. 77, č. 19 (2000), s. 2952-2954. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA AV ČR IAA1010809; GA ČR GA202/98/0669
Grant - others:NATO HTECH grant(XX) LG972051
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.906, year: 2000

A continuously emitting electroluminescent device fabricated by Si+-ion implantation and subsequent annealing of a SiO2 layer on a silicon substrate is reported.
Permanent Link: http://hdl.handle.net/11104/0030742