0132532 - FZU-D 990484 RIV US eng J - Journal Article
Moiseev, K. D. - Mikhailova, M. P. - Stoyanov, N. D. - Yakovlev, Y. P. - Hulicius, Eduard - Šimeček, Tomislav - Oswald, Jiří - Pangrác, Jiří
Electroluminiscence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/ N-GaSb heterostructures.
Journal of Applied Physics. Roč. 86, č. 11 (1999), s. 6264-6268. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA AV ČR IAA1010807
EU Projects: European Commission(XE) BRPR970466 - ADMIRAL
Grant - others:Russian Basic Research Founadation(RU) 17841a; European Community Project(XE) IC20-CT97-007
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.275, year: 1999
Permanent Link: http://hdl.handle.net/11104/0030551