0132494 - FZU-D 990445 RIV CZ eng J - Journal Article
Pacherová, Oliva - Slezák, Jiří - Cukr, Miroslav - Bartoš, Igor
Charge screening around Si dopant atoms in GaAs by X-STM.
Czechoslovak Journal of Physics. Roč. 49, č. 11 (1999), s. 4736C-4739C. ISSN 0011-4626.
[Symposium on Surface Physics /7./. Třešť, 28.06.1999-02.07.1999]
R&D Projects: GA ČR GA102/99/0415
Grant - others:MŠk(CZ) Kontakt-090
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.328, year: 1999
Permanent Link: http://hdl.handle.net/11104/0000567