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LEED structural analysis of GaAs(001)-c(4X4) surface

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    0104224 - FZU-D 20040566 RIV NL eng J - Journal Article
    Romanyuk, Olexandr - Jiříček, Petr - Cukr, Miroslav - Bartoš, Igor
    LEED structural analysis of GaAs(001)-c(4X4) surface.
    [Strukturní analýza povrchu GaAs(001)-c(4X4) metodou LEED.]
    Surface Science. 566-568, - (2004), s. 89-93. ISSN 0039-6028. E-ISSN 1879-2758
    R&D Projects: GA AV ČR IAA1010108
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : electron-solid interactions * low energy electron diffraction(LEED) * molecular beam epitaxy(MBE) * surface relaxation and reconstruction * gallium arsenide * low index single crystal scattering * diffraction
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 2.168, year: 2004

    The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(001)-c(4X4) grown by molecular beam epitaxy (MBE) has been performed

    Byla provedena tensorová LEED analýza intenzit elektronových svazků difraktovaných od vzorku GaAs(001)-c(4x4), který byl připraven epitaxí z molekulárních svazků
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