0104224 - FZU-D 20040566 RIV NL eng J - Journal Article
Romanyuk, Olexandr - Jiříček, Petr - Cukr, Miroslav - Bartoš, Igor
LEED structural analysis of GaAs(001)-c(4X4) surface.
[Strukturní analýza povrchu GaAs(001)-c(4X4) metodou LEED.]
Surface Science. 566-568, - (2004), s. 89-93. ISSN 0039-6028. E-ISSN 1879-2758
R&D Projects: GA AV ČR IAA1010108
Institutional research plan: CEZ:AV0Z1010914
Keywords : electron-solid interactions * low energy electron diffraction(LEED) * molecular beam epitaxy(MBE) * surface relaxation and reconstruction * gallium arsenide * low index single crystal scattering * diffraction
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.168, year: 2004

The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(001)-c(4X4) grown by molecular beam epitaxy (MBE) has been performed

Byla provedena tensorová LEED analýza intenzit elektronových svazků difraktovaných od vzorku GaAs(001)-c(4x4), který byl připraven epitaxí z molekulárních svazků
Permanent Link: http://hdl.handle.net/11104/0011501