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Si-substitutional defects on the .alfa.-Sn/Si(111)-(.sqrt. 3 x. sqrt. 3) surface

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    0100708 - FZU-D 20040431 RIV NL eng J - Journal Article
    Kaminski, W. - Jelínek, Pavel - Pérez, R. - Flores, F. - Ortega, J.
    Si-substitutional defects on the .alfa.-Sn/Si(111)-(.sqrt. 3 x. sqrt. 3) surface.
    [Si-substituční defekt na Sn/Si(111)-(.sqrt. 3 x .sqrt. 3) povrchu.]
    Applied Surface Science. Roč. 234, - (2004), s. 286-291. ISSN 0169-4332. E-ISSN 1873-5584
    Grant - others:CICYT(ES) MAT-2001-0665
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : first principles DFT * local- orbital method * Sn/Si(111) surface
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.497, year: 2004

    We use a first-principle DFT local-orbital method and analyze Si-defects on a large Sn/Si(111) surface unit-cell, corresponding to a defect concentration as low as 3.7%

    Použili jsme prvoprincipielní DFT metodu lokálních orbitálů a analyzovali jsme Si-poruchy v rámci velkých Sn/Si(111) povrchových základních buněk, odpovídající nízké koncentraci 3.7%

    Permanent Link: http://hdl.handle.net/11104/0000008

     
     
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