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Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors
- 1.0100451 - FZU-D 20040307 RIV US eng J - Journal Article
Sinova, J. - Jungwirth, Tomáš - Liu, X. - Sasaki, Y. - Furdyna, J. K. - Atkinson, W. A. - MacDonald, A. H.
Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors.
[Relaxace magnetizace v e feromagnetickém (Ga,Mn)As.]
Physical Review. B. Roč. 69, č. 8 (2004), 085209/1-085209/6. ISSN 0163-1829
R&D Projects: GA ČR GA202/02/0912
Institutional research plan: CEZ:AV0Z1010914
Keywords : magnetization relaxation * ferromagnetic semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.075, year: 2004
We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga, Mn)As alloy
Teoretický popis relaxace magnetizace lokálních momentů na Mn díky p-d výměnné interakci s itinerantními spiny ve feromagnetickém (Ga,Mn)As
Permanent Link: http://hdl.handle.net/11104/0007953
Number of the records: 1