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Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor
- 1.0079015 - FZÚ 2007 RIV US eng J - Journal Article
Wunderlich, J. - Jungwirth, Tomáš - Kaestner, B. - Irvine, A.C. - Shick, Alexander - Stone, N. - Wang, K. Y. - Rana, U. - Giddings, A.D. - Foxon, C. T. - Campion, R. P. - Williams, D.A. - Gallagher, B. L.
Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor.
[Anisotropní magnetoresistence v režimu Coulombovské blokády v jednoelektronovém transistoru na bázi (Ga,Mn)As.]
Physical Review Letters. Roč. 97, č. 7 (2006), 077201/1-077201/4. ISSN 0031-9007. E-ISSN 1079-7114
R&D Projects: GA ČR GA202/05/0575; GA MŠMT LC510
Grant - others:EPSRC(GB) GR/S81407/01
Institutional research plan: CEZ:AV0Z10100521
Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 7.072, year: 2006
Experimental discovery and theoretical description of the Coulomb blockade anisotropic magnetoresistance in a ferromagnetic GaMnAs single electron transistor
Experimentální objev a teoretický popis anisotropní magnetoresistence v režimu Coulombovské blokády v jednoelektronovém transistoru na bázi (Ga,Mn)As
Permanent Link: http://hdl.handle.net/11104/0143916
Number of the records: 1