Number of the records: 1  

Modification of materials by high energy plasma ions

  1. 1.
    0028677 - FZÚ 2006 RIV NL eng J - Journal Article
    Lorusso, A. - Belloni, F. - Doria, D. - Nassisi, V. - Wolowski, J. - Badziak, J. - Parys, P. - Krása, Josef - Láska, Leoš - Boody, F. P. - Torrisi, L. - Mezzasalma, A. - Picciotto, A. - Gammino, S. - Calcagnile, L. - Quarta, G. - Bleiner, D.
    Modification of materials by high energy plasma ions.
    [Modifikace materiálů ionty velkých energiích emitovaných z laserem generovaného plazmatu.]
    Nuclear Instruments & Methods in Physics Research Section B. Roč. 240, - (2005), s. 229-233. ISSN 0168-583X. E-ISSN 1872-9584
    Grant - others:EU(XE) HIPRI-1999-CT-00053/PALS/05; European Community program IHP(XE) HPMT-CT-2001-0263
    Institutional research plan: CEZ:AV0Z10100523
    Keywords : laser-produced plasma * ion diagnostic measurements * implantation of laser-produced ions
    Subject RIV: BH - Optics, Masers, Lasers
    Impact factor: 1.181, year: 2005

    The high-power iodine laser of the Prague Asterix Laser System (PALS), emitting radiation at 438 nm wavelength, 400 ps pulse duration and about 250 Jmaximum pulse energy, was employed to irradiate in vacuum a germanium target. The amount, the energy and the charge state of the ions emitted from the laser-produced plasma are analyzed by time-of-flight measurements performed with the use of ion collectors (ICs) and an electrostatic ion energy analyzer (IEA). Energetic Ge ions emitted from the laser-produced plasma were directly implanted into C substrates placed at 30 cm distance from the target and 30o angle with respect to the normal to the target surface. The implantation depths and implanted doses were analyzed by two different techniques: the Rutherford backscattering spectrometry (RBS) and the laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS

    Laserovými pulsy o energii 250 J generovanými laserovým systém PALS byly produkovány vysoce nabité Ge ionty, které byly implantovány do uhlíkových substrátů. Pomocí hloubkového profilu byla stanovena energie implantovaných iontů. Ten byl měřen dvěma metodami: RBS a hmotovou spektrometrií laserem ablaovaného povrchu substrátu.
    Permanent Link: http://hdl.handle.net/11104/0118596


     
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.