Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour

0554495 - ÚPT 2022 RIV US eng C - Conference Paper (international conference)
Hausladen, M. - Bomke, V. - Buchner, P. - Bachmann, M. - Knápek, Alexandr - Schreiner, R.
Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour.
2021 34th International Vacuum Nanoelectronics Conference (IVNC). New York: IEEE, 2021 - (Purcell, S.; Mazellier, J.), (2021), s. 169-170. ISBN 978-1-6654-2589-6. ISSN 2380-6311.
[International Vacuum Nanoelectronics Conference (IVNC) /34./. online (FR), 05.07.2021-09.07.2021]
Institutional support: RVO:68081731
Keywords : silicon field emission * field emitter array * parastichy tip arrangements * aperture field emission grid * laser micromachining
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://ieeexplore.ieee.org/document/9600717

Densely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 μA in the spiral ordered array and 120 μA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 % (spiral) respectively ±5.7 % (rectangular) with a mean degradation of3.0 μA/h (spiral) and0.12 μA/h (rectangular) could be observed.
Permanent Link: http://hdl.handle.net/11104/0329211