0605448 - FZÚ 2025 RIV US eng J - Journal Article
Jimenez-Martin, Alejandro - Sosnová, Zdenka - Soler Polo, Diego Manuel - Mallada Faes, Benjamin Jose - González-Herrero, H. - Edalatmanesh, Shayan - Martín, N. - Écija, D. - Jelínek, Pavel - de la Torre, B.
Atomically precise control of topological state hybridization in conjugated polymers.
ACS Nano. Roč. 18, č. 43 (2024), s. 29902-29912. ISSN 1936-0851. E-ISSN 1936-086X
R&D Projects: GA MŠMT LM2018110; GA MŠMT LM2023051
Institutional support: RVO:68378271
Keywords : on-surface reaction * SPM * topological phase * 1D chains
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 15.8, year: 2023 ; AIS: 3.53, rok: 2023
Method of publishing: Open access
DOI: https://doi.org/10.1021/acsnano.4c10357

Realization of topological quantum states in carbon nanostructures has recently emerged as a promising platform for hosting highly coherent and controllable quantum dot spin qubits. However, their adjustable manipulation remains elusive. Here, we report the atomically accurate control of the hybridization level of topologically protected quantum edge states emerging from topological interfaces in bottom-up-fabricated π-conjugated polymers. Our investigation employed a combination of low-temperature scanning tunneling microscopy and spectroscopy, along with high-resolution atomic force microscopy, to effectively modify the hybridization level of neighboring edge states by the selective dehydrogenation reaction of molecular units in a pentacene-based polymer and demonstrate their reversible character. Density functional theory, tight binding, and complete active space calculations for the Hubbard model were employed to support our findings, revealing that the extent of orbital overlap between the topological edge states can be finely tuned based on the geometry and electronic bandgap of the interconnecting region. These results demonstrate the utility of topological edge states as components for designing complex quantum arrangements for advanced electronic devices.
Permanent Link: https://hdl.handle.net/11104/0363213