0602721 - FZÚ 2025 RIV NL eng J - Journal Article
Navrátil, J. - Caha, O. - Kopeček, Jaromír - Čermák, P. - Prokleška, J. - Holý, V. - Sechovský, V. - Beneš, L. - Carva, K. - Honolka, Jan - Drašar, Č.
Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 301, March (2024), č. článku 117148. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA ČR GA19-13659S; GA MŠMT LM2023051; GA MŠMT LM2023065; GA MŠMT(CZ) EF16_019/0000760
Institutional support: RVO:68378271
Keywords : p-type SnS * single crystal * semiconductor * doping * electrical properties
OECD category: Astronomy (including astrophysics,space science)
Impact factor: 3.9, year: 2023 ; AIS: 0.532, rok: 2023
Method of publishing: Limited access
Result website:
https://doi.org/10.1016/j.mseb.2023.117148DOI: https://doi.org/10.1016/j.mseb.2023.117148

Defect control is critical to achieve long carrier lifetimes in semiconductors. SnS is a promising thermoelectric and photovoltaic material, in which native defects play a detrimental role, particularly in photovoltaics. In this study, we investigated the Fe-doping of SnS and the interaction of Fe impurities with native defects in a series of single crystals of Sn1-xFexS up to concentrations of x = 0.05. Although the doped single crystals appear rather disordered, the hole mobility is very high (~8500 cm2V-1s 1 at 30 K for Sn0.99Fe0.01S), suggesting that hole-mediated charge transport in this material is largely insensitive to extrinsic impurities.

Permanent Link: https://hdl.handle.net/11104/0360013