0600560 - FZÚ 2025 RIV US eng J - Journal Article
Kromka, Alexander - Varga, Marián - Aubrechtová Dragounová, Kateřina - Babčenko, Oleg - Pfeifer, Rene - Flatae, A.M. - Sledz, F. - Akther, F. - Agio, F. - Potocký, Štěpán - Stehlík, Štěpán
High-yield production of SiV-doped nanodiamonds for spectroscopy and sensing applications.
ACS Applied Nano Materials. Roč. 7, č. 21 (2024), s. 24766-24777. ISSN 2574-0970. E-ISSN 2574-0970
R&D Projects: GA ČR(CZ) GF23-04322L; GA MŠMT(CZ) EH22_008/0004596; GA MŠMT LM2023051
Institutional support: RVO:68378271
Keywords : porous diamond films * molten salt thermal etching * SiV-doped nanodiamonds * dynamic light scattering * transmission electron microscopy * photoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 5.3, year: 2023 ; AIS: 0.912, rok: 2023
Method of publishing: Open access
DOI: https://doi.org/10.1021/acsanm.4c04676

Nanodiamonds (NDs) with optically active centers are crucial for biological, optoelectronic, and quantum applications. This study presents two CVD-based approaches for fabricating NDs with silicon-vacancy (SiV) color centers: bottom-up (BU) and top-down (TD) methods. The BU approach creates nanoporous diamond films with core-shell structure, while TD uses molten-salt thermal etching to form uniform porous structures. Advanced characterization revealed distinct morphologies and optical properties. BU yielded higher-quality diamond phases with surface SiV centers, while TD showed efficient nondiamond phase removal. Ultrasonic disintegration produced 40-500 nm NDs. Photoluminescence confirmed SiV centers (738 nm) in all NDs, with temperature sensitivity of 0.022 ± 0.003 nm/K and line width broadening of 0.068 ± 0.004 nm/K up to 100 °C. Both methods offer advantages over existing techniques, including streamlined production and scalability.
Permanent Link: https://hdl.handle.net/11104/0358088