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Semiconductor WO.sub.3./sub. thin films deposited by pulsed reactive magnetron sputtering

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    0600482 - FZÚ 2026 RIV NL eng J - Journal Article
    Písaříková, Aneta - Krýsová, Hana - Kapran, Anna - Písařík, Petr - Čada, Martin - Olejníček, Jiří - Hippler, Rainer - Hubička, Zdeněk
    Semiconductor WO3 thin films deposited by pulsed reactive magnetron sputtering.
    Materials Science in Semiconductor Processing. Roč. 186, Feb (2025), č. článku 109034. ISSN 1369-8001. E-ISSN 1873-4081
    R&D Projects: GA MŠMT(CZ) EH22_008/0004596
    Institutional support: RVO:68378271
    Keywords : HiPIMS * mid-frequency pulsed magnetron sputtering * photocurrent * plasma diagnostics * RF probe * semiconductor films
    OECD category: Fluids and plasma physics (including surface physics)
    Impact factor: 4.2, year: 2023 ; AIS: 0.56, rok: 2023
    Method of publishing: Open access
    DOI: https://doi.org/10.1016/j.mssp.2024.109034

    A pulsed reactive magnetron sputtering system with a tungsten target and a gas mixture of argon and oxygen was investigated as a source for the deposition of semiconductor WO3 thin films on soda lime glass substrates and on the glass with transparent conductive SnO2:F (FTO) electrode.
    Permanent Link: https://hdl.handle.net/11104/0357803


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