0585191 - FZÚ 2025 RIV US eng J - Journal Article
Alam, Mahebub - Hubík, Pavel - Gedeonová, Zuzana - Fekete, Ladislav - Kopeček, Jaromír - Taylor, Andrew - Mortet, Vincent
Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power.
Applied Physics Letters. Roč. 124, April (2024), č. článku 161904. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : diamond * boron doping * thick
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.5, year: 2023

Here, we investigate the effect of N2 addition in MWPECVD on the growth of thick {113} epitaxial diamond layers. We identify a narrow range of N2 concentrations for the growth of crack-free thick layers with a smooth surface morphology. Without N2, cracks start to appear after a layer thickness of 7–10 μm due to elastic energy stored in the layer, but the addition of N2 stabilizes growth. We also investigate the use of low MW power density growth conditions to produce thick B-doped layers, where we observe a very high B incorporation efficiency. Finally, we demonstrate the fabrication of a thick (>200 μm) {113} p+ monocrystal. The concentration of B has been investigated by Hall effect, Raman, and SIMS. The growth of high quality thick {113} epitaxial layer with high B concentration (>1020 cm−3) and low resistivity and the fabrication of freestanding p+ substrates are necessary steps for vertical electronic devices such as high power Schottky diodes.
Permanent Link: https://hdl.handle.net/11104/0353691