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Profiles of oxygen and titanium point defects in ferromagnetic TiO2 films

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    0584888 - ÚFM 2025 RIV GB eng J - Journal Article
    Nhu, T. Q. - Friák, Martin - Miháliková, Ivana - Kiaba, M. - Hong, N. H.
    Profiles of oxygen and titanium point defects in ferromagnetic TiO2 films.
    Journal of Physics D-Applied Physics. Roč. 57, č. 26 (2024), č. článku 265302. ISSN 0022-3727. E-ISSN 1361-6463
    Research Infrastructure: CzechNanoLab - 90110
    Institutional support: RVO:68081723
    Keywords : vacancies * defects * ferromagnetic * DMSO * spintronics
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.4, year: 2022
    Method of publishing: Open access
    https://iopscience.iop.org/article/10.1088/1361-6463/ad3767

    Experimentally it is shown that without any oxygen manipulation for TiO2, a strong room
    temperature ferromagnetism could be expected only in ultra-thin films, with the ideal thickness
    below 100 nm. Both bulks and nano-powders of TiO2 are diamagnetic, indicating that the
    surface and its nano-sublayers play very important roles in tailoring the magnetic properties in
    this type of compound. To shed a new light on the defect-related magnetism in the typical case
    of anatase TiO2 surfaces, we have performed a series of quantum-mechanical calculations for
    TiO2 slabs containing Ti or O vacancies in different distances from the (001) surface. The
    lowest formation energies were obtained for the Ti vacancies in the first sub-surface layer and
    the O vacancies within the surface. The computed magnetic states reflect complicated structural
    relaxations of atoms influenced by both the surface and vacant atomic positions. O atoms cannot
    contribute much to magnetic moment when Ti vacancies are isolated and far from the surface.
    Ti vacancies in TiO2 are only metastable. The formation energy of Ti interstitials is lower than
    for Ti vacancies since high-temperature annealing, especially with a lot of O2 available that
    would fill up O-related defects, and as a result, eliminate most of Ti vacancies. Lower
    temperatures, less O2, and shorter exposure times may enable not only partial elimination of Ti
    vacancies but also can facilitate their diffusion into different states of aggregations. In the
    ferromagnetic films (i.e. thin films below 100 nm), it looks like that the O atoms are located
    closer to the Ti vacancies.
    Permanent Link: https://hdl.handle.net/11104/0352728

     
     
Number of the records: 1  

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