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Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

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    0578172 - ÚFM 2024 RIV US eng J - Journal Article
    Pongrácz, Jakub - Vacek, P. - Gröger, Roman
    Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid.
    Journal of Applied Physics. Roč. 134, č. 19 (2023), č. článku 195704. ISSN 0021-8979. E-ISSN 1089-7550
    R&D Projects: GA TA ČR(CZ) FW01010183; GA MŠMT(CZ) EF18_053/0016933
    Research Infrastructure: CzechNanoLab - 90110
    Institutional support: RVO:68081723
    Keywords : Crystallographic defects * Crystal lattices * Crystal structure * Epitaxy * Etching * Atomic force microscopy
    OECD category: Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
    Impact factor: 3.2, year: 2022
    Method of publishing: Limited access
    https://pubs.aip.org/aip/jap/article-abstract/134/19/195704/2921456/Recombination-activity-of-threading-dislocations?redirectedFrom=fulltext

    Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations
    with different recombination rates of electron–hole pairs. Here, we investigate types and distributions of threading dislocations of the
    MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic
    force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission
    electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The
    recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative
    measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was
    obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading
    dislocations were nearly recombination-inactive.
    Permanent Link: https://hdl.handle.net/11104/0347224

     
     
Number of the records: 1  

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