Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting

0577954 - FZÚ 2024 RIV CH eng J - Journal Article
Mirza, M. Inam - Bulgakov, Alexander - Sopha, H. - Starinskiy, S.V. - Turčičová, Hana - Novák, Ondřej - Mužík, Jiří - Smrž, Martin - Volodin, V.A. - Mocek, Tomáš - Macák, J. M. - Bulgakova, Nadezhda M.
Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting.
Frontiers in nanotechnology. Roč. 5, Oct. (2023), č. článku 1271832. ISSN 2673-3013
R&D Projects: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Institutional support: RVO:68378271
Keywords : amorphous titania nanotubes * ultrashort laser pulses * laser-induced crystallization * non-thermal processes * stress waves * multilayer nanofilms * selective annealing
OECD category: Optics (including laser optics and quantum optics)
Method of publishing: Open access

As-prepared nanostructured semiconductor materials are usually found in an amorphous form,which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities.The most utilized method is thermal annealing in a furnace,which however is time- and energy-consuming and not applicable for low-temperature melting substrates.An alternative is laser annealing,which can be carried out in a relatively short time and,additionally,offers the possibility of annealing localized areas.However,laser-annealed nanostructures are often distorted by melting,while preserving the as-prepared morphology is essential for practical applications.We analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures:anodic TiO2 nanotube layers and Ge/Si multilayer stacks.For both cases,regimes of crystallization have been found,which yield in preserving the initial nanomaterial morphologies without any melting signs.

Permanent Link: https://hdl.handle.net/11104/0347032