Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations

0577456 - FZÚ 2024 RIV US eng J - Journal Article
Holiatkina, M. - Pöppl, A. - Kalabukhova, E. - Lančok, Ján - Savchenko, Dariia
Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations.
Journal of Applied Physics. Roč. 134, č. 14 (2023), č. článku 145702. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : silicon carbide * EPR * spin exchange * nitrogen donors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1063/5.0172320

In this manuscript, we provide a comprehensive study of the spin coupling dynamics between conduction electrons and N donors in monocrystalline 4H SiC with concentrations of N donors from 10^17 to 5×10^19 cm^−3 by EPR and MW perturbation techniques at T=4.2–300 K. At low T, two triplets due to N donors in cubic (Nk) hexagonal (Nh) positions and triplet arisen from spin-interaction between Nh and Nk were observed in 4H SiC with Nd−Na≈10^17 cm^−3. A single S-line dominates the EPR spectra in all investigated samples at high T. It was established that this line occurs due to the exchange coupling of localized electrons (dominate at low T) and non-localized electrons (dominate at high T). Using the theoretical fitting of the temperature variation of S-line EPR linewidth in 4H SiC with Nd–Na≤5×10^18 cm^−3, the energy levels of 57–65 meV that correlate with the valley-orbit splitting values for Nk in 4H SiC monocrystals were obtained.
Permanent Link: https://hdl.handle.net/11104/0346586