Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry

0574634 - FZÚ 2024 RIV US eng J - Journal Article
Sobaszek, M. - Brzhezinskaya, M. - Olejnik, A. - Mortet, V. - Alam, M. - Sawczak, M. - Ficek, M. - Gazda, M. - Weiss, Zdeněk - Bogdanowicz, R.
Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry.
Small. Roč. 19, č. 26 (2023), č. článku 2208265. ISSN 1613-6810. E-ISSN 1613-6829
R&D Projects: GA ČR(CZ) GA20-11140S
Institutional support: RVO:68378271
Keywords : core-level spectroscopies * deuterium-based plasma * density functional theory (DFT) calculations * polycrystalline diamonds * Raman spectroscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 13.3, year: 2022
Method of publishing: Open access

Polycrystalline B-doped diamond is a promising material for high-power aqueous electrochemical applications. The chemical vapor deposition (CVD) of B-doped diamond is diversified by deuterium substituting habitually applied hydrogen. Deuterium in the CVD plasma affects synthesis reactions and leads to a preferential (111) texture and more effective boron incorporation into the lattice, resulting in one order of magnitude higher density of charge carriers. The relevant mechanisms were studied by high-resolution core-level spectroscopies. A rich set of highly occupied and localized surface states exists for samples deposited in deuterium. The enhanced incorporation of boron into (111) facet of diamond leads to surface electronic states below the Fermi level and above the bulk valence band edge. This band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry.

Permanent Link: https://hdl.handle.net/11104/0347693