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Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

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    0574625 - FZÚ 2024 RIV NL eng J - Journal Article
    Latoňová, Věra - Allport, P.P. - Bach, E. - Federičová, Pavla - Kroll, Jiří - Kvasnička, Jiří - Mikeštíková, Marcela … Total 28 authors
    Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation.
    Nuclear Instruments & Methods in Physics Research Section A. Roč. 1050, May (2023), č. článku 168119. ISSN 0168-9002. E-ISSN 1872-9576
    R&D Projects: GA MŠMT(CZ) LTT17018; GA MŠMT(CZ) LM2018104
    Institutional support: RVO:68378271
    Keywords : HL-LHC * ATLAS ITk * silicon micro-strip sensor * polysilicon bias resistor * Testchip
    OECD category: Particles and field physics
    Impact factor: 1.4, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1016/j.nima.2023.168119

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K.
    Permanent Link: https://hdl.handle.net/11104/0349073

     
     
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