Improved gas sensing capabilities of MoS.sub.2./sub./diamond heterostructures at room temperature

0573745 - FZÚ 2024 RIV US eng J - Journal Article
Kočí, Michal - Izsák, T. - Vanko, G. - Sojková, M. - Hrdá, J. - Szabó, Ondrej - Husák, M. - Végsö, K. - Varga, Marián - Kromka, Alexander
Improved gas sensing capabilities of MoS₂/diamond heterostructures at room temperature.
ACS Applied Materials and Interfaces. Roč. 15, č. 28 (2023), s. 33191-34322. ISSN 1944-8244. E-ISSN 1944-8252
R&D Projects: GA MŠMT LM2023051; GA ČR(CZ) GF23-04322L
Grant - others:AV ČR(CZ) SAV-23-11
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : gas sensors * H-terminated diamond * MoS₂ * MoS₂/H-NCD heterostructure * room temperature * P-N junction * sensitivity * gas interaction model
OECD category: Materials engineering
Impact factor: 9.5, year: 2022
Method of publishing: Open access

MoS2 and NCD have attracted considerable attention due to their unique electronic structure and extraordinary physical and chemical properties in many applications. In this study, the synthesis of MoS2 and H-NCD thin films using appropriate physical/chemical deposition methods and their analysis in terms of gas sensing properties in their individual and combined forms are demonstrated. The sensitivity and time domain characteristics of the sensors were investigated for three gases: NO2, NH3 and neutral synthetic air. It was observed that the heterostructure-based gas sensor exhibits improved sensitivity to oxidizing NO2 and reducing NH3 gases compared to pure active materials. Different gas interaction model pathways were developed to describe the current flow mechanism through the sensing area with/without heterostructure. The gas interaction model independently considers the influence of each material as well as the current flow mechanism through the formed P-N heterojunction.
Permanent Link: https://hdl.handle.net/11104/0344127