Pulsed laser annealed rare earth doped TiO.sub.2./sub. thin films for luminescence and sensing applications

0573665 - FZÚ 2024 RIV NL eng J - Journal Article
Kiisk, V. - Novotný, Michal - Kodu, M. - Pikker, S. - Avarmaa, T. - Remsa, Jan - Lančok, Ján - Vrňata, M. - Jaaniso, R.
Pulsed laser annealed rare earth doped TiO₂ thin films for luminescence and sensing applications.
Applied Surface Science. Roč. 637, Nov (2023), č. článku 157884. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA MŠMT(CZ) EF16_019/0000760
Grant - others:AV ČR(CZ) EstAv-21-08; OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : pulsed laser annealing * luminescent material * metal-oxide * sensing applications * TiO₂ thin film * rare earth ions
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.7, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.apsusc.2023.157884

Many research activities target functional luminescent materials based on metal oxides activated with trivalent rare earth ions. Specific applications necessitate optimization of material preparation, annealing and excitation-detection techniques. Hereby we utilized pulsed laser deposition to obtain thin (150 nm) TiO2 films containing 1 at% of samarium (Sm) or neodymium (Nd) impurity ions. The effect of pulsed laser annealing (ArF excimer laser, wavelength 193 nm, pulse duration 20 ns) on their structural and luminescent properties was investigated. It was found that, compared to conventional thermal annealing at 700 ◦C, proper laser annealing (fluence 50 mJ/cm2, 5–15 shots) induced much better crystallization (nearly phase-pure anatase) along with respective improvement of host-sensitized trivalent rare earth fluorescence.
Permanent Link: https://hdl.handle.net/11104/0344157