Epitaxial growth and characterization of SnSe phases on Au(111)

0572879 - FZÚ 2024 RIV US eng J - Journal Article
Frezza, Federico - Sánchez Grande, Ana - Ondráček, Martin - Vondráček, Martin - Chen, Qifan - Stetsovych, Oleksandr - Villalobos-Vilda, V. - Tosi, E. - Palomares, F. J. - Lopez, M. F. - Sánchez-Sánchez, C. - Ernst, Karl-Heinz - Martín-Gago, J.A. - Honolka, Jan - Jelínek, Pavel
Epitaxial growth and characterization of SnSe phases on Au(111).
Journal of Physics-Condensed Matter. Roč. 35, č. 33 (2023), č. článku 335001. ISSN 0953-8984. E-ISSN 1361-648X
R&D Projects: GA ČR(CZ) GA22-04408S; GA ČR(CZ) GF21-17194L
Research Infrastructure: e-INFRA CZ II - 90254
Institutional support: RVO:68378271
Keywords : 2D materials * group IV-VI semiconductors * metal chalcogenides * scanning probe microscopies * XPS/XPD * ARPES
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.7, year: 2022
Method of publishing: Open access

Different phases of the same IV-VI semiconductor can present completely different electronic and optical properties. In almost defect-free two-dimensional structures of SnSe epitaxially grown on a Au(111) substrate, we describe a coverage-dependent transition from a metallic β-SnSe to a semiconducting α-SnSe phase. The combination of scanning tunneling microscopy/spectroscopy, non-contact atomic force microscopy, x-ray photoelectron spectroscopy/diffraction and angle-resolved photoemission spectroscopy, complemented by density functional theory, provides a comprehensive study of the geometric and electronic structure of both phases. Our work demonstrates the possibility to grow two distinct SnSe phases on Au(111) with high quality and on a large scale. Tight interaction with the substrate allows stabilization of the previously experimentally unreported β-SnSe, while the ultra-thin films of orthorhombic α-SnSe are structurally and electronically equivalent to bulk SnSe.
Permanent Link: https://hdl.handle.net/11104/0345256