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Comparative determination of atomic boron and carrier concentration in highly boron doped nano-crystalline diamond
- 1.0570673 - FZÚ 2024 RIV CH eng J - Journal Article
Taylor, Andrew - Ashcheulov, Petr - Hubík, Pavel - Weiss, Zdeněk - Klimša, Ladislav - Kopeček, Jaromír - Hrabovský, Jan - Veis, M. - Lorinčík, J. - Elantyev, I. - Mortet, Vincent
Comparative determination of atomic boron and carrier concentration in highly boron doped nano-crystalline diamond.
Diamond and Related Materials. Roč. 135, May (2023), č. článku 109837. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA ČR(CZ) GA20-03187S; GA MŠMT(CZ) EF16_019/0000760; GA MŠMT EF15_003/0000445
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Research Infrastructure: CzechNanoLab - 90110; CzechNanoLab II - 90251
Institutional support: RVO:68378271
Keywords : diamond * boron-doped * estimation * spectroscopic * relative * hall
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.1, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.diamond.2023.109837
We have compared the total boron content and hole carrier concentration values obtained from various destructive and non-destructive quantification methods in boron doped nano-crystalline diamond films prepared over a range of doping levels, using microwave plasma enhanced chemical vapour deposition. Destructive secondary-ion mass spectrometry and relatively unreported glow discharge optical emission spectrometry were complemented by non-destructive Raman, spectroscopic ellipsometry and van der Pauw Hall measurements. Measurement techniques are discussed, including details of the glow discharge optical emission spectrometry technique, use of different laser powers and wavelengths, fitting parameters for Raman spectroscopy, and improved ellipsometry modelling. Finally, measured values are compared and discussed regarding their viability for estimation of total boron and electrically active boron in doped nano-crystalline diamond layers.
Permanent Link: https://hdl.handle.net/11104/0342007
Number of the records: 1