Number of the records: 1
Compensation of strain in InGaN/GaN QWs by AlGaN layer
- 1.0568264 - FZÚ 2023 RIV DE eng A - Abstract
Batysta, Jan - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Kuldová, Karla
Compensation of strain in InGaN/GaN QWs by AlGaN layer.
Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 200-200
[International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
R&D Projects: GA TA ČR(CZ) FW03010298
Institutional support: RVO:68378271
Keywords : MOVPE * InGaN/GaN * quantum wells * strain
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
This work deals with modeling bandedges of a AlGaN layer for minimising carrier capture in potential holes that are emerging due to polarisation at interfaces of AlGaN and GaN.
Permanent Link: https://hdl.handle.net/11104/0339593
Number of the records: 1