Number of the records: 1
Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects
- 1.0567935 - FZÚ 2023 RIV PL eng A - Abstract
Hospodková, Alice - Čížek, J. - Hájek, František - Hubáček, Tomáš - Dominec, Filip - Kuldová, Karla - Liedke, M.O. - Butterling, M. - Wagner, A.
Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects.
PCCG 2022, Polish Conference on Crystal Growth 2022 - Book of Abstracts. Gdańsk: Gdańsk University of Technology, 2022 - (Klimczuk, T.). s. 23-23
[Polish Conference on Crystal Growth 2022 /PCCG 2022/. 19.06.2022-24.06.2022, Gdańsk]
R&D Projects: GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : MOVPE * GaN * defects * vacancies
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf
Defects related to gallium vacancies (VGa) were studied in a set of GaN samples prepared by MOVPE under different technological conditions by Variable energy positron annihilation spectroscopy VEPAS. Different correlations between layers grown from TMGa and TEGa were observed. Increased VGa concentration enhances excitonic luminescence, probably VGa prevents formation of some other highly efficient nonradiative defect. Anticorrelation between VGa formation and carbon contamination was also observed.
Permanent Link: https://hdl.handle.net/11104/0339197
Number of the records: 1