Femtosecond laser studies of the single event effects in low gain avalanche detectors and PINs at ELI Beamlines

0565722 - FZÚ 2023 RIV NL eng J - Journal Article
Laštovička-Medin, G. - Rebarz, Mateusz - Kramberger, G. - Kroll, Jiří - Kropielnicki, Kamil - Laštovička, Tomáš - Přeček, Martin - Andreasson, Jakob
Femtosecond laser studies of the single event effects in low gain avalanche detectors and PINs at ELI Beamlines.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 1041, OCT (2022), č. článku 167321. ISSN 0168-9002. E-ISSN 1872-9576
R&D Projects: GA MŠMT(CZ) LM2018141; GA MŠMT EF16_019/0000789; GA MŠMT EF15_003/0000447
Grant - others:OP VVV - ADONIS(XE) CZ.02.1.01/0.0/0.0/16_019/0000789; OP VVV - ELIBIO(XE) CZ.02.1.01/0.0/0.0/15_003/0000447
Institutional support: RVO:68378271
Keywords : SEB voltage bias * LGAD * LHC upgrade * PIN * femtosecond laser * TPA/SPA-TCT * ELI * energy deposition threshold
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 1.4, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.nima.2022.167321

A feasibility study conducted at the laser facility ELI Beamlines confirms that fs-laser pulses can produce Single Event Effect (SEE), Single Event Upset (SEU) and Single Event Burnout (SEB) conditions in irradiated Low Gain Avalanche Detectors (LGADs) and the corresponding PIN diodes. A comprehensive and systematic study on PIN and LGAD mortality has been conducted to experimentally determine the stability, instability, and irreversible damage thresholds for LGADs and PINs exploiting a fs-laser system. Thresholds are given as sets of two parameters: bias voltage and laser pulse energy (energy deposition threshold). Using the Two-Photon Absorption (TPA) - Transient Current Technique (TCT) to study the mechanism that triggers SEU/SEB conditions in LGADs, as a function of illumination position establishes this technique as a promising tool for more advanced explorations of SEE, not only in LGADs but also in other Si-based sensors.

Permanent Link: https://hdl.handle.net/11104/0337240