Enhancing critical current density of bulk MgB.sub.2./sub. via nanoscale boron and Dy.sub.2./sub.O.sub.3./sub. doping

0565188 - FZÚ 2023 RIV DE eng J - Journal Article
Miryala, M. - Kitamoto, K. - Arvapalli, S.S. - Das, D. - Jirsa, Miloš - Murakami, M. - Mamidanna, S.R.R.
Enhancing critical current density of bulk MgB₂ via nanoscale boron and Dy₂O₃ doping.
Advanced Engineering Materials. Roč. 24, č. 11 (2022), č. článku 2200487. ISSN 1438-1656. E-ISSN 1527-2648
Grant - others:AV ČR(CZ) StrategieAV21/3
Program: StrategieAV
Institutional support: RVO:68378271
Keywords : critical current density (J(c)) * Dy₂O₃ doping * flux pinning * MgB₂ * nanoscale boron * Raman spectroscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.6, year: 2022
Method of publishing: Open access

Moderate critical current density (Jc) has been a long-lasting problem in bulkMgB2superconductors. We show a certain increment inJcof bulk MgB2via theuse of amorphous boron precursor together with Dy2O3doping. Dy2O3dopantconcentration varies from 0 to 2 wt%. X-Ray diffraction (XRD) shows the for-mation of DyB4particles. The critical temperature (Tc) is not affected by Dy2O3doping and stands close to 38 K, showing that there is no Dy interaction with theMgB2lattice. Microstructural studies show nanometer-sized MgB2grains. A highself-fieldJcof around 380 kA cm 2is achieved at 20 K within the Dy2O3dopingrange of 0.5–1.5 wt%. At around 1 wt% Dy2O3doping an improved high-fieldperformance, 90 kA cm 2at 2 T, 20 K, is observed. In theflux pinning diagram,1 wt% Dy2O3doping caused a peak shift from 0.19 (0 wt%) to 0.23. This indicatessecondary pinning by DyB4and lattice strains. Raman studies show the increasein the phonon density of states (PDOS) with increasing Dy2O3doping.
Permanent Link: https://hdl.handle.net/11104/0336703