Large imprint in epitaxial 0.67Pb(Mg.sub.1/3./sub.Nb.sub.2/3./sub.)O.sub.3./sub.-0.33PbTiO.sub.3./sub. thin films for piezoelectric energy harvesting applications

0564640 - FZÚ 2023 RIV US eng J - Journal Article
Belhadi, J. - Hanani, Z. - Shepelin, N.A. - Bobnar, V. - Koster, G. - Hlinka, Jiří - Pergolesi, D. - Lippert, T. - El Marssi, M. - Spreitzer, M.
Large imprint in epitaxial 0.67Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ thin films for piezoelectric energy harvesting applications.
Applied Physics Letters. Roč. 121, č. 21 (2022), č. článku 182903. ISSN 0003-6951. E-ISSN 1077-3118
Grant - others:AV ČR(CZ) StrategieAV21/3
Program: StrategieAV
Institutional support: RVO:68378271
Keywords : relaxor ferroelectrics * piezoelectric * energy harvesting * thin films * PMN-PT
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4, year: 2022
Method of publishing: Limited access
https://doi.org/10.1063/5.0115777

Tuning and stabilizing a large imprint in epitaxial relaxor ferroelectric thin films is one of the key factors for designing micro-electromechanical devices with an enhanced figure of merit (FOM). The PMN–33PT is observed to grow coherently on SSO substrates and exhibits large tetragonality compared to bulk PMN–33PT, while on DSO substrates (lattice mismatch of −1.9%), the PMN–33PT film is almost completely relaxed and shows reduced tetragonality. Due to the compressive epitaxial strain, the fully strained PMN–33PT film displays typical ferroelectric P–E hysteresis loops, while the relaxed sample shows relaxor-like P–E loops. The studied PMN–33PT films hold great promise to maximize the FOM toward applications in piezoelectric devices.

Permanent Link: https://hdl.handle.net/11104/0336308