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Bi Layer properties in the Bi-FeNi GMR-type structures probed by spectroscopic ellipsometry
- 1.0562430 - FZÚ 2023 RIV CH eng J - Journal Article
Kovaleva, N. - Chvostová, Dagmar - Fekete, Ladislav - Dejneka, Alexandr
Bi Layer properties in the Bi-FeNi GMR-type structures probed by spectroscopic ellipsometry.
Coatings. Roč. 12, č. 6 (2022), č. článku 872. E-ISSN 2079-6412
R&D Projects: GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : optical GMR effect * bismuth-permalloy multilayers * spectroscopic ellipsometry
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
Bismuth (Bi) having a large atomic number is characterized by a strong spin–orbit coupling (SOC) and is a parent compound of many 3D topological insulators (TIs). The ultrathin Bi films are supposed to be 2D TIs possessing a nontrivial topology, which opens the possibility of developing new efficient technologies in the field of spintronics. Here we aimed at studying the dielectric function properties of ultrathin Bi/FeNi periodic structures using spectroscopic ellipsometry. The [Bi(d)–FeNi(1.8 nm)]N GMR-type structures were grown by rf sputtering deposition on Sitall-glass (TiO2) substrates. The llipsometric angles Y(w) and D(w) were measured for the grown series (d = 0.6, 1.4, 2.0, and 2.5 nm, N= 16) of the multilayered film samples at room temperature for four angles of incidence of 60, 65, 70, and 75 in a wide photon energy range of 0.5–6.5 eV.
Permanent Link: https://hdl.handle.net/11104/0334749
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