Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO.sub.2./sub./TiO.sub.2./sub./IrO.sub.2./sub. capacitors

0561797 - FZÚ 2023 RIV US eng J - Journal Article
Maier, F.J. - Schneider, M. - Artemenko, Anna - Kromka, Alexander - Stoeger-Pollach, M. - Schmid, U.
Temperature and ambient atmosphere dependent electrical characterization of sputtered IrO₂/TiO₂/IrO₂ capacitors.
Journal of Applied Physics. Roč. 131, č. 9 (2022), č. článku 095301. ISSN 0021-8979. E-ISSN 1089-7550
Institutional support: RVO:68378271
Keywords : IrO₂/TiO₂/IrO₂ capacitors * dielectric properties * temperature dependence
OECD category: Electrical and electronic engineering
Impact factor: 3.2, year: 2022
Method of publishing: Open access

Titanium dioxide (TiO2) is a high-performance material for emerging device applications, such as in resistive switching memories, in high-k capacitors, or, due to its flexoelectricity, in micro/nano-electro-mechanical systems. Enhanced electrical properties of TiO2 are ensured, especially by a careful selection of the bottom electrode material. Iridium dioxide (IrO2) is an excellent choice, as it favors the high-k rutile phase growth of TiO2. In this study, we introduce the fabrication of IrO2/TiO2/IrO2 capacitors and thoroughly characterize their electrical behavior. These capacitors show a dielectric constant for low temperature sputtered TiO2 of ∼70. From leakage current measurements, a coupled capacitive–memristive behavior is determined, which is assumed due to the presence of a reduced TiO2−x layer at the IrO2/TiO2 interface observed from transmission electron microscopy analyses.

Permanent Link: https://hdl.handle.net/11104/0334300