Hafnium oxide (HfO.sub.2./sub.) – a multifunctional oxide: a review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories

0557950 - FZÚ 2023 RIV DE eng J - Journal Article
Banerjee, W. - Kashir, Alireza - Kamba, Stanislav
Hafnium oxide (HfO₂) – a multifunctional oxide: a review on the prospect and challenges of hafnium oxide in resistive switching and ferroelectric memories.
Small. Roč. 18, č. 23 (2022), č. článku 2107575. ISSN 1613-6810. E-ISSN 1613-6829
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA21-06802S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : thin films * resistive memory * ferroelectric memory
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 13.3, year: 2022
Method of publishing: Limited access
https://doi.org/10.1002/smll.202107575

In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2-based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
Permanent Link: http://hdl.handle.net/11104/0331832